Dielectric composition, dielectric element, electronic component and laminated electronic component

ABSTRACT

The problem addressed lies in providing a dielectric composition having a relatively high dielectric constant of 800 or greater when a DC bias of at least 8 V/μm is applied, and also in providing a dielectric element employing said dielectric composition, an electronic component, and a laminated electronic component. [Solution] A dielectric composition in which the composition of the main component is in accordance with the following formula (1): (Bi a Na b Sr c ) (Mg d Ti 1-d )O 3  (1) [where a, b, c and d satisfy the following: 0.10≦a≦0.65, 0&lt;b≦0.45, 0&lt;c≦0.85, 0&lt;d&lt;0.20, and 0.95≦a+b+c≦1.05].

TECHNICAL FIELD

The present invention relates to a dielectric composition and adielectric element employing same, and to an electronic component and alaminated electronic component; more specifically, the present inventionrelates to a dielectric composition, a dielectric element, an electroniccomponent and a laminated electronic component which are advantageouslyused for medium- and high-voltage applications with a relatively highrated voltage.

PRIOR ART

In recent years there has been a great demand for miniaturization ofdielectric elements as electronic circuits reach higher densities, andminiaturization of electronic components such as laminated ceramiccapacitors together with increased capacity are rapidly progressing,while the applications thereof are also expanding. Variouscharacteristics are required as this takes place.

For example, medium- and high-voltage capacitors which are used indevices such as ECMs (engine electronic computer modules), fuelinjection devices, electronic control throttles, inverters, converters,HID headlamp units, hybrid engine battery control units and digitalstill cameras have a rated voltage in excess of 100 V. Medium- andhigh-voltage capacitors such as these need a high dielectric constantand high capacitance when a high DC bias is applied.

However, conventional dielectric compositions are designed on theassumption that they will be used when a low DC bias of the order of 1V/μm is applied, for example. This means that if an electronic componenthaving a dielectric layer comprising a conventional dielectriccomposition is used when a high DC bias is applied, there is a problemin that the dielectric constant and capacitance are reduced. Thisproblem becomes more marked the higher the DC bias, especially inlaminated ceramic capacitors which have very thin layers, because thedielectric constant and the capacitance tend to decrease.

In order to solve the abovementioned problem, Patent Document 1mentioned below describes a dielectric composition which contains a maincomponent comprising: barium titanate having an alkali metal oxidecontent of 0.02 wt % or less; at least one compound selected from amongeuropium oxide, gadolinium oxide, terbium oxide, dysprosium oxide,holmium oxide, erbium oxide, thulium oxide, and ytterbium oxide; bariumzirconate, magnesium oxide and manganese oxide, said main componentbeing represented by the following compositional formula:{BaO}_(m)TiO₂+αR₂O₃+βBaZrO₃+γMgO+gMnO (where R₂O₃ is at least onecompound selected from among Eu₂O₃, Gd₂O₃, Tb₂O₃, Dy₂O₃, Ho₂O₃, Er₂O₃,Tm₂O₃ and Yb₂O₃; and α, β, γ, and g represent a mole ratio and arewithin the following ranges: 0.001≦α≦0.06, 0.005≦β≦0.06, 0.001<γ≦0.12,0.001<g≦0.12, γ+g≦0.13, and 1.000<m≦1.035); and said dielectriccomposition contains, as an auxiliary component, silicon oxide in anamount of 0.2-5.0 mol as SiO₂ equivalent, with respect to 100 mol of themain component.

However, although a dielectric composition such as that described inPatent Document 1 has a relatively large dielectric constant when a DCbias of 5 V/μm is applied, a dielectric composition having a highdielectric constant under an even higher DC bias voltage would bedesirable in order to cope with the thinner layers accompanying theminiaturization and higher capacity of medium- and high-voltagecapacitors.

PRIOR ART DOCUMENTS Patent Documents

[Patent Document 1] JP 3334607 B2

SUMMARY OF THE INVENTION Problem to be Solved by the Invention

In view of the situation outlined above, the aim of the presentinvention lies in providing a dielectric composition which isadvantageously used for medium- and high-voltage applications with arelatively high rated voltage, and which has a relatively highdielectric constant of 800 or greater when a DC bias of at least 8 V/μmis applied, and also in providing a dielectric element employing saiddielectric composition, an electronic component, and a laminatedelectronic component.

Moreover, according to the present invention, a direct current electricfield which is applied to the dielectric composition, dielectricelement, electronic component and laminated electronic component isreferred to as a DC (direct current) bias. Furthermore, thecharacteristic of the dielectric constant and capacitance of thedielectric composition etc. varying as a result of a DC bias beingapplied is referred to as the DC bias characteristics.

Means for Solving the Problem

In order to achieve the abovementioned aim, the dielectric compositionaccording to the present invention has a main component composition inaccordance with the following formula (1):

(Bi_(a)Na_(b)Sr_(c))(Mg_(d)Ti_(1-d))O₃  (1)

characterized in that a, b, c and d satisfy the following: 0.10≦a≦0.65,0<b≦0.45, 0<c≦0.85, 0<d<0.20, and 0.95≦a+b+c≦1.05.

It should be noted that a, b, c and d represent the number of atoms ofBi, Na, Sr and Mg when there are three oxygen atoms.

This dielectric composition according to the present invention has theabovementioned constitution, and as a result it is possible to achieve arelatively high dielectric constant of 800 or greater when a DC bias ofat least 8 V/μm is applied.

Preferably, a, b, c and d satisfy the following: 0.10≦a≦0.65,0.01≦b≦0.45, 0.01≦c≦0.85, 0.01≦d≦0.16, and 0.95≦a+b+c≦1.05.

A dielectric element according to the present invention comprises theabovementioned dielectric composition.

An electronic component according to the present invention is providedwith a dielectric layer comprising the abovementioned dielectriccomposition.

A laminated electronic component according to the present invention hasa laminated portion formed by alternately laminating an internalelectrode layer and a dielectric layer comprising the abovementioneddielectric composition.

Advantage of the Invention

The inventive dielectric element, electronic component and laminatedelectronic component are advantageously used in a medium- andhigh-voltage capacitor with a relatively high rated voltage. The presentinvention makes it possible to provide a dielectric composition having arelatively high dielectric constant of 800 or greater when a DC bias ofat least 8 V/μm is applied, and also in providing a dielectric elementemploying said dielectric composition, an electronic component, and alaminated electronic component.

There is no particular limitation as to the applications of thedielectric element comprising the abovementioned dielectric composition,electronic component and laminated electronic component, but they areuseful in a circuit protection snubber capacitor or smoothing capacitorin which a high dielectric constant is required when a high DC bias isapplied.

In addition, the dielectric composition according to the presentinvention has excellent characteristics without containing lead. As aresult, the inventive dielectric composition, dielectric element,electronic component and laminated electronic component are outstandingfrom an environmental point of view.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic diagram of a ceramic capacitor according to a modeembodiment of the present invention;

FIG. 2 is a view in cross section of a laminated ceramic capacitoraccording to a different mode of embodiment of the present invention;and

FIG. 3 is a graph schematically showing both a DC bias characteristicsgraph in accordance with an exemplary embodiment of the presentinvention, and a DC bias characteristics graph of a conventionalBaTiO₃-based dielectric composition.

MODE OF EMBODIMENT OF THE INVENTION

A preferred mode of embodiment of the present invention will bedescribed below, in some cases with reference to the figures. It shouldbe noted that in the figures, the same reference symbols are used forelements which are the same or equivalent and a duplicate descriptionwill not be given.

As shown in FIG. 1, a single-layer ceramic capacitor 100 according to amode of embodiment of the present invention comprises a disk-shapeddielectric body 1 and a pair of electrodes 2, 3. The single-layerceramic capacitor 100 is obtained by forming the electrodes 2, 3 on bothsurfaces of the dielectric body 1. There is no particular limitation asto the shapes of the dielectric body 1 and the electrodes 2, 3.Furthermore, there is no particular limitation as to the dimensionsthereof either, and suitable dimensions should be set in accordance withthe application.

The dielectric body 1 is formed by a dielectric composition representedby the following formula (1).

(Bi_(a)Na_(b)Sr_(c))(Mg_(d)Ti_(1-d))O₃  (1)

In formula (1), a, b, c and d satisfy the following: 0.10≦a≦0.65,0<b≦0.45, 0<c≦0.85, 0<d<0.20, and 0.95≦a+b+c≦1.05.

The dielectric composition according to the present invention has theabovementioned constitution, and as a result it is possible to achieve arelatively high dielectric constant of 800 or greater when a DC bias of8 V/μm is applied.

The dielectric according to this mode of embodiment is a combination offerroelectric compositions, and by providing this specific combination,it is possible to achieve a relatively high dielectric constant of 800or greater when a DC bias of 8 V/μm is applied.

If a, b, c and d are outside of the abovementioned range, there is areduction in dielectric constant when a DC bias of 8 V/μm is applied, orthe withstand voltage decreases, leading to breakdown.

If a+b+c is less than 0.95 or greater than 1.05, it is not possible toobtain an adequate sintered density and the insulation resistance isreduced, so it is difficult to use the dielectric composition when ahigh DC bias is applied.

The content of the main component represented by formula (1) ispreferably at least 90 mass % based on the dielectric composition as awhole, from the point of view of obtaining a dielectric constant whichis sufficient for practical use as a dielectric composition.Furthermore, the dielectric composition may contain one or more oxidesof elements selected from: Zn, Mn, Co, Ni, Al and Si, as auxiliarycomponents in addition to the main component. In addition, thedielectric composition may include impurities such as P and Zr which maybecome mixed in during the production process.

The constitution of the dielectric composition may be measured by X-rayfluorescence analysis or by ICP atomic emission spectroscopy.

The relative density of the abovementioned dielectric composition ispreferably 95% or greater when the theoretical density is 100%. In thiscase, in the present specification, the relative density refers to theproportion of the actual measured value of the density with respect tothe theoretical density. It should be noted that the theoretical densityof the dielectric composition may be calculated using the latticeconstant obtained by means of X-ray diffraction and the stoichiometricratio obtained on the basis of perfect crystals, for example. The actualmeasured value of the density of the dielectric composition may beobtained by means of the Archimedes method, for example. The relativedensity of the dielectric composition may be adjusted by varying thefiring temperature or firing time etc.

An example of a method for producing the ceramic capacitor shown in FIG.1 will be described below.

First of all, powders of bismuth oxide (Bi₂O₃), sodium carbonate(Na₂CO₃), strontium carbonate (SrCO₃), magnesium carbonate (MgCO₃) andtitanium oxide (TiO₂) etc. are prepared as the starting materials of thedielectric body 1.

The abovementioned powder starting materials are then weighed out insuch a way that the dielectric composition which has been fired(sintered compact) satisfies the composition of the dielectriccomposition according to this mode of embodiment.

The weighed starting material powders are then wet-mixed using a ballmill or the like. A calcined article is obtained by calcining themixture obtained by wet-mixing. At this point, the calcination isnormally carried out under air. Furthermore, the calcination temperatureis preferably 700-900° C. and the calcination time is preferably 1-10hours.

The resulting calcined article is wet-ground in a ball mill or the like,after which it is dried to obtain calcined powder. A binder is thenadded to the resulting calcined powder and press molding is performed toobtain a molded article. There is no particular limitation as to thebinder which may be used provided that it is a binder which isconventionally employed in this technical field. A specific example of abinder which may be cited is PVA or the like. There is no particularlimitation as to the amount of binder which is added, but an amount of1-5 wt % is preferably added when the calcined powder is taken as 100 wt%. In addition, the molding pressure during press molding is preferablyof the order of 5×10² MPa. There is no particular limitation as to theshape of the molded article. According to this mode of embodiment, adisk shape is formed, but a cuboid shape or another shape may equally beformed.

The dielectric body 1 is obtained by firing the resulting moldedarticle. Here, the firing is normally carried out under air.Furthermore, the firing temperature is preferably 950-1400° C., and thefiring time is preferably 2-10 hours.

The electrodes 2, 3 are then formed on both surfaces of the resultingdielectric body 1. There is no particular limitation as to the materialof the electrodes, and Ag, Au, Cu, Pt, Ni or the like is used. Theelectrodes are formed by means of a method such as vapor deposition,sputtering, printing or electroless plating, but other methods may alsobe used and there is no particular limitation as to the method offorming the electrodes.

FIG. 2 is a view in cross section of a laminated ceramic capacitoraccording to a different mode of embodiment of the present invention. Asshown in FIG. 2, a laminated ceramic capacitor 200 according to a modeof embodiment of the present invention comprises a capacitor elementmain body 5 having a structure in which dielectric layers 7 and internalelectrode layers 6A, 6B are alternately stacked. A pair of terminalelectrodes 11A, 11B which conduct, respectively, with the internalelectrode layers 6A, 6B alternately arranged inside the element mainbody 5 are formed at both ends of the element main body 5. There is noparticular limitation as to the shape of the element main body 5, but itis normally a cuboid shape. Furthermore, there is no particularlimitation as to the dimensions thereof, and suitable dimensions shouldbe set in accordance with the application.

The dielectric layers 7 comprise the dielectric composition according tothe present invention.

The thickness per layer of the dielectric layers 7 may be freely set andmay be 1-100 μm, for example, but there is no particular limitation.

The internal electrode layers 6A, 6B are provided in such a way as to beparallel. The internal electrode layers 6A are formed in such a way thatone end thereof is exposed at the end surface of the laminated body 5where the terminal electrode 11A is formed. Furthermore, the internalelectrode layers 6B are formed in such a way that one end thereof isexposed at the end surface of the laminated body 5 where the terminalelectrode 11B is formed. In addition, the internal electrode layers 6Aand internal electrode layers 6B are disposed in such a way that themajority thereof is overlapping in the direction of stacking.

A metal such as Au, Pt or Ag may be used as the material of the internalelectrode layers 6A, 6B, for example, but there is no particularlimitation and other metals may also be used.

The terminal electrodes 11A, 11B are provided at the end surfaces of thelaminated body 5 in contact with the ends of the internal electrodelayers 6A, 6B which are exposed at said end surfaces. As a result, theterminal electrodes 11A, 11B are electrically connected to the internalelectrode layers 6A, 6B, respectively. The terminal electrode 11A, 11Bmay comprise a conductive material having Ag, Au, Cu or the like as themain component thereof. The thickness of the terminal electrodes 11A,11B is appropriately set in accordance with the application and the sizeof the laminated dielectric element, among other things. The thicknessmay be set at 10-50 μm, but there is no particular limitation.

A single-layer ceramic capacitor and a laminated ceramic capacitor inaccordance with modes of embodiment of the present invention weredescribed above. The dielectric composition according to the presentinvention has a high dielectric constant and capacitance when a high DCbias is applied, and it can therefore be advantageously used for medium-and high-voltage capacitors with a relatively high rated voltage, forexample.

Furthermore, the present invention is not limited to the modes ofembodiment described above. For example, the dielectric layerscomprising the dielectric composition according to the present inventionmay also be used as a dielectric elements in a semiconductor device etc.Furthermore, a known configuration may be freely used in the presentinvention, other than the dielectric composition. Furthermore, thecalcined powder may be produced by means of a known method such ashydrothermal synthesis when the ceramic capacitor is produced.Furthermore, Bi(Mg_(0.5)Ti_(0.5))O₃, (Bi_(0.5)Na_(0.5))TiO₃ and SrTiO₃etc. may also be prepared, mixed and sintered as precursors.

The dielectric according to this mode of embodiment is a combination offerroelectric compositions, and by providing this specific combination,it is possible to achieve a relatively high dielectric constant of 800or greater when a DC bias of 8 V/μm is applied.

The dielectric composition according to the present invention may alsobe referred to as a combination of ferroelectric compositions such asBi(Mg_(0.5)Ti_(0.5))O₃, (Bi_(0.5)Na_(0.5))TiO₃ and SrTiO₃, for example.It is believed to be possible to provide a relatively high dielectricconstant of 800 or greater when a DC bias of at least 8 V/μm is appliedby virtue of this specific combination of ferroelectric compositions.

EXEMPLARY EMBODIMENTS

The present invention will be described below in further detail with theaid of exemplary embodiments and comparative examples. However, thepresent invention is not limited to the following exemplary embodiments.

Exemplary Embodiments 1-23 and Comparative Examples 1-10

Powders of bismuth oxide (Bi₂O₃), sodium carbonate (Na₂CO₃), strontiumcarbonate (SrCO₃), magnesium carbonate (MgCO₃) and titanium oxide (TiO₂)were prepared as starting materials.

The abovementioned powder starting materials were then weighed out insuch a way that the dielectric composition which had been fired(sintered compact) satisfied the compositions shown in table 1. Itshould be noted here that a, b, c and d in table 1 represent numericalvalues of a, b, c and d, respectively, in the following formula (1)

(Bi_(a)Na_(b)Sr_(c))(Mg_(d)Ti_(1-d))O₃  (1)

The weighed starting material powders were then wet-mixed using a ballmill, after which the resulting mixture was calcined for 2 hours at 850°C. under air in order to obtain a calcined article. The resultingcalcined article was wet-ground in a ball mill to obtain calcinedpowder. 1 wt % of PVA was then added to the calcined powder, taking thecalcined powder as 100 wt %, molding was carried out at a pressure ofabout 5×10² MPa, and a disk-shaped molded article having planedimensions of the order of diameter 17 mm and thickness 1 mm wasobtained.

The resulting molded article was then fired under the air at a firingtemperature of 950-1400° C. and a firing time of 2-10 hours underconditions such that the relative density was 95% or greater, in orderto obtain dielectric composition samples. When the density of theresulting dielectric samples was measured, the density of all thesamples was 95% or greater with respect to the theoretical density.

The compositions of the resulting dielectric composition samples wereanalyzed. The compositions were analyzed by means of X-ray fluorescenceanalysis. As a result, it was confirmed that the compositions of thesintered compacts were equivalent to the compositions in table 1.

Ag electrodes were vapor-deposited on both surfaces of the resultingdielectric composition samples in order to produce capacitor samples.

The dielectric constant (E) at room temperature of 25° C. when a DC biasof 8 V/μm was applied was measured for each of the resulting capacitorsamples.

A DC-voltage power source (Glassman High Voltage, WX10P90) was connectedto a digital LCR meter (Hewlett-Packard, 4284A), and the dielectricconstant was measured by said digital LCR meter at room temperature of25° C. while a DC bias of 8 V/μm was applied.

The dielectric constant when a DC bias of 8 V/μm was applied at roomtemperature of 25° C. is shown in table 1 for each exemplary embodimentand comparative example. Furthermore, the bar lines in the tableindicate that breakdown occurred when a DC bias of 8 V/μm was appliedand the dielectric constant could not be measured. The examples in whichthe dielectric constant was 800 or greater when a DC bias of 8 V/μm wasapplied were deemed to be satisfactory, and those in which thedielectric constant was 900 or greater were deemed to be especiallysatisfactory.

TABLE 1

Bi Na Sr Mg 8 V/μm a b c d ε @ 8 V/μm a + b + c

 1 0.24 0.04 0.72 0.10 965 1.000

 2 0.32 0.12 0.56 0.10 1467 1.000

 3 0.28 0.18 0.54 0.05 1651 1.000

 4 0.36 0.16 0.48 0.10 1100 1.000

 5 0.33 0.23 0.45 0.05 1827 1.000

 6 0.40 0.20 0.40 0.10 1491 1.000

 7 0.48 0.18 0.35 0.15 1042 1.000

 8 0.44 0.24 0.32 0.10 1264 1.000

 9 0.42 0.32 0.27 0.05 1543 1.000

 10 0.48 0.28 0.24 0.10 1170 1.000

 11 0.52 0.32 0.16 0.10 1037 1.000

 12 0.51 0.41 0.09 0.05 1053 1.000

 13 0.56 0.36 0.08 0.10 971 1.000

 14 0.65 0.35 0.01 0.15 908 1.000

 15 0.31 0.01 0.69 0.15 903 1.000

 16 0.31 0.21 0.43 0.05 1634 0.950

 17 0.34 0.24 0.47 0.05 1495 1.050

 18 0.48 0.18 0.35 0.15 954 1.000

 19 0.10 0.05 0.85 0.03 902 1.000

 20 0.26 0.25 0.50 0.01 1930 1.000

 21 0.54 0.45 0.01 0.05 913 1.000

 22 0.54 0.16 0.30 0.19 822 1.000

 23 0.49 0.18 0.34 0.16 925 1.000

 1 0.05 0.05 0.90 0.00 — 1.000

 2 0.45 0.45 0.10 0.00 — 1.000

 3 0.50 0.50 0.00 0.00 — 1.000

 4 0.00 0.00 1.00 0.00 230 1.000

 5 0.65 0.35 0.00 0.15 — 1.000

 6 0.30 0.00 0.70 0.15 750 1.000

 7 0.30 0.21 0.42 0.05 — 0.930

 8 0.34 0.24 0.48 0.05 — 1.060

 9 0.55 0.15 0.30 0.20 728 1.000

 10 0.66 0.34 0.01 0.16 781 1.000

 = Composition ratio

 = Exemplary Embodiment (1-23)

 = Comparative Example (1-10)

It can be seen from the above that the dielectric compositions accordingto Exemplary Embodiments 1-23 in which a, b, c and d satisfied0.10≦a≦0.65, 0<b≦0.45, 0<c≦0.85, 0<d<0.20, and 0.95≦a+b+c≦1.05 had adielectric constant of 800 or greater when a DC bias of 8 V/μm wasapplied, and these compositions were in a preferred range. In addition,the dielectric compositions according to Exemplary Embodiments 1-21 and23 in which a, b, c and d satisfied 0.10≦a≦0.65, 0.01≦b≦0.45,0.01≦c≦0.85, 0.01≦d≦0.16, and 0.95≦a+b+c≦1.05 had a dielectric constantof 900 or greater when a DC bias of 8 V/μm was applied, and thesecompositions were in an especially preferred range.

In contrast to this, the dielectric compositions according toComparative Examples 1-10 which did not satisfy at least one from among0.10≦a≦0.65, 0<b≦0.45, 0<c≦0.85, 0<d<0.20, and 0.95≦a+b+c≦1.05 had adielectric constant of less than 800 when a DC bias of 8 V/μm wasapplied, or it was not possible to measure the dielectric constant.

In addition, a DC bias applied in the range of 0-8 V/μm was varied forthe capacitor sample according to Exemplary Embodiment 9 and thedielectric constant was measured. The measurement result is shown inFIG. 3 together with an outline of the change in dielectric constant ofa conventional BaTiO₃-based capacitor sample.

It is clear from FIG. 3 that the dielectric constant sharply dropped asthe DC bias applied increased in the case of the conventionalBaTiO₃-based capacitor sample, whereas the dielectric constant when a DCbias of 1-2 V/μm was applied was a maximum in the case of the capacitorsample having the dielectric composition according to the presentinvention, and even when the DC bias increased, a high dielectricconstant was maintained.

KEY TO SYMBOLS

1 Dielectric body

-   2, 3 Electrode-   5 Laminated body-   6A, 6B Internal electrode layer-   7 Dielectric layer-   11A, 11B Terminal electrode-   100 Ceramic capacitor-   200 Laminated ceramic capacitor

1. A dielectric composition in which the composition of the maincomponent is in accordance with the following formula (1):(Bi_(a)Na_(b)Sr_(c))(Mg_(d)Ti_(1-d))O₃  (1) characterized in that a, b,c and d satisfy the following: 0.10≦a≦0.65, 0<b≦0.45, 0<c≦0.85,0<d<0.20, and 0.95≦a+b+c≦1.05.
 2. The dielectric composition as claimedin claim 1, wherein a, b, c and d satisfy the following: 0.10≦a≦0.65,0.01≦b≦0.45, 0.01≦c≦0.85, 0.01≦d≦0.16, and 0.95≦a+b+c≦1.05.
 3. Adielectric element comprising the dielectric composition as claimed inclaim
 1. 4. An electronic component provided with a dielectric layercomprising the dielectric composition as claimed in claim
 1. 5. Alaminated electronic component having a laminated portion formed byalternately laminating an internal electrode layer and a dielectriclayer comprising the dielectric composition as claimed in claim 1.